New PDF release: Advanced Semiconductor and Organic Nano-Techniques

By Hadis Morkoc

ISBN-10: 0125070608

ISBN-13: 9780125070607

  • Materials Scientists, Physicists, Engineers.

Content:
Preface for quantity I

, Pages xiii-xv, Hadis Morkoç
List of members for quantity I

, Page xvii
Preface for quantity II

, Pages ix-xiii, Hadis Morkoç
List of participants for quantity II

, Pages xv-xvi
Preface for quantity III

, Pages xi-xvii, Hadis Morkoç
List of members for quantity III

, Pages xix-xx
Chapter 1 - rising Advances in Microelectronics, Optoelectronics and Bioelectronics

, Pages 1-145, H. Morkoç
Chapter 2 - The problem of constructing a Roadmap from Microelectronics to Nanoelectronics

, Pages 147-209, R. Doering
Chapter three - CMOS Scaling to Nanometer Lengths

, Pages 211-238, Y. Taur
Chapter four - Sub-20-nm Electron Devices

, Pages 239-302, okay. Likharev
Chapter five - purposes of unmarried Electron Tunnelling

, Pages 303-324, J.P. Pekola
Chapter 6 - Silicon on Insulator: expertise and Devices

, Pages 325-365, S. Cristoloveanu, F. Balestra
Chapter 7 - Quantum Dot Lasers

, Pages 367-410, D.G. Deppe, H. Huang
Chapter eight - Nanotechnology and Magnetic Memories

, Pages 411-439, A.V. Pohm
Chapter nine - Quantum details technological know-how from the point of view of a tool and fabrics Engineer

, Pages 441-502, S. Bandyopadhyay
Chapter 1 - Engineering the digital constitution and the Optical homes of Semiconductor Quantum Dots

, Pages 1-50, M. De Giorgi, R. Rinaldi, T. Johal, G. Pagliara, A. Passaseo, M. De Vittorio, M. Lomascolo, R. Cingolani, A. Vasanelli, R. Ferreira, G. Bastard
Chapter 2 - GaN-Based Modulation Doped FETs and Heterojunction Bipolar Transistors

, Pages 51-145, H. Morkoç
Chapter three - Ultraviolet Photodetectors in keeping with GaN and AlGaN

, Pages 147-190, H. Temkin
Chapter four - natural Field-Effect Transistors for Large-Area Electronics

, Pages 191-240, C.D. Dimitrakopoulos
Chapter five - natural Optoelectronics: The Case of Oligothiophenes

, Pages 241-291, G. Gigli, M. Anni, R. Cingolani, G. Barbarella
Chapter 6 - Single-Walled Carbon Nanotubes for Nanoelectronics

, Pages 293-343, M.S. Fuhrer
Chapter 7 - brief Wavelength III-Nitride Lasers

, Pages 345-405, A.V. Nurmikko
Chapter 1 - electric Conduction via Molecules

, Pages 1-41, F. Zahid, M. Paulsson, S. Datta
Chapter 2 - Molecular digital Devices

, Pages 43-187, J. Chen, M.A. Reed, S.M. Dirk, D.W. rate, A.M. Rawlett, J.M. travel, D.S. Grubisha, D.W. Bennett
Chapter three - Fabrication of Nanoscale constructions utilizing STM and AFM

, Pages 189-224, A.A. Baski
Chapter four - Optical Nanosensors for organic Applications—Spectroscopic innovations on the mobile Level

, Pages 225-250, B.M. Cullum, T. Vo-Dinh
Chapter five - present concerns and Advances in Dissociated mobile Culturing on Nano-and Microfabricated Substrates

, Pages 251-318, H.G. Craighead, C.D. James, A.M.P. Turner
Chapter 6 - electric Fields: Their Nature and impression on organic Systems

, Pages 319-346, R.J. Colello, J.K. Alexander
Chapter 7 - DNA Chips Come of Age

, Pages 347-370, G. Ramsay
Chapter eight - organic Computation: From DNA to Cells

, Pages 371-405, C.C. Maley
Chapter nine - mobile Manipulations

, Pages 407-482, C. González, S.D. Collins
Chapter 10 - Fluidics in Microchannels

, Pages 483-504, P.M.St. John, M. Deshpande
Chapter eleven - Hybrid organic Nanomachines

, Pages 505-540, J.J. Schmidt, C.D. Montemagno
Index for quantity I

, Pages 503-519
Index for quantity II

, Pages 407-421
Index for quantity III

, Pages 541-555

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Additional info for Advanced Semiconductor and Organic Nano-Techniques

Example text

The results obtained since the report of the first high performance pseudomorphic MODFET show very clearly that as the In mole fraction is increased, the noise and gain performance for a given gate length and frequency improve quite noticeably. As the data show, the current gain cut-off frequency increases by more than a factor of 2, from about 110 to 260 GHz, as the InAs mole fraction is increased from zero to 65%. A compilation of minimum noise figure for GaAs- and InP-based MODFET technologies are shown in Fig.

Unfortunately, larger AlAs compositions exacerbate the DX center problem. Typically, DX-center traps are reduced by choosing an Al mole fraction of less than approximately 22%. However, this comes at the expense of reducing the conduction band discontinuity and thus the sheet electron concentration (Morko^ et al. 1993). The PMODFET, or pseudomorphic MODFET alleviates the DX center problem as well as providing a channel in InGaN with superior transport properties over GaAs. The structure is achieved by inserting a thin InGaAs layer between the GaAs buffer and the AlGaAs setback layer in otherwise conventional MODFET.

Shortly thereafter, the material system expanded to include the InGaAs InAlAs (InP) structures on InP substrates (Morko^ et al. 1993), and SiGe strained layers on Si substrates. Although, the InP based heterostructures are capable of operating at higher frequencies, in the end, the structure that turned out to have the widest range of applications is the pseudomorphic AlGaAs/InGaAs/GaAs PMODFET. Gate Source contact and overlay Drain contact and overlay >^ n ^ Donor layer (AlGaAs) Spacer (AlGaAs) Channel layer (InGaAs) Buffer: GaAs Substrate: GaAs (SI) FIG.

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Advanced Semiconductor and Organic Nano-Techniques by Hadis Morkoc


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